03 / Scientific Articles
Scientific Articles
Stories I helped put together about experimental work on semiconductors, nuclear materials, and zero-dimensional structures.
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2026
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials 12 (12), 1.
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2026
III–V-on-Si Midwave Infrared Photodetectors with High Operating Temperature
Crystal Growth & Design 26 (9), 3647-3653.
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2025
Tensile-strained InGaAs quantum dots with interband emission in the mid-infrared
2025 IEEE Photonics Conference (IPC), 1-2.
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2025
Epitaxial integration of superconducting nitrides with cubic GaN
APL Materials 13 (3).
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2025
Tuning of electronic properties in highly lattice-mismatched epitaxial SmN
Physical Review B 112.15 (2025): 155145.
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2025
Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy
J. Phys. Chem. C (2025) 129 (10): 5237–5244..
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2024
High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2× 4) surface reconstruction
Sensors and Actuators A: Physical 374, 115464.
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2024
Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates
AIP Advances 14 (12).
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2024
Synthesis of samarium nitride thin films on magnesium oxide (001) substrates using molecular beam epitaxy
Crystals 14 (9), 765.
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2024
Accelerated thermal property mapping of TRISO advanced nuclear fuel
Materials Today Advances 21, 100455.
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2024
High-speed long-wave infrared ultra-thin photodetectors
APL Photonics 9 (1).
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2023
Tunable mid-infrared interband emission from tensile-strained InGaAs quantum dots
ACS nano 17 (3), 2318-2327.
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2023
Direct integration of GaSb with GaAs (111) A using interfacial misfit arrays
Crystal Growth & Design 23 (12), 8670-8677.
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2022
Advances in actinide thin films: synthesis, properties, and future directions
Reports on Progress in Physics 85 (12), 123101.
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2021
Interface structure and luminescence properties of epitaxial PbSe films on InAs (111) A
Journal of Vacuum Science & Technology A 39 (2).
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2021
Tensile-strained self-assembly of InGaAs on InAs (111) A
Journal of Vacuum Science & Technology B 39 (6).
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2021
Self-assembly of Ge and GaAs quantum dots under tensile strain on InAlAs (111) A
Crystal Growth & Design 21 (3), 1674-1682.
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2021
Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
Sensors and Actuators A: Physical.
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2021
Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2× 4) surface reconstruction
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2020
Strain-driven quantum dot self-assembly by molecular beam epitaxy
Journal of Applied Physics 128 (3).
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2020
Self-assembly of tensile-strained Ge quantum dots on InAlAs (111) A
Journal of Crystal Growth 533, 125468.
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2020
Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs (111) A quantum dots
Semiconductor Science and Technology 35 (10), 105001.
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2019
InAs (111) A homoepitaxy with molecular beam epitaxy
Journal of Vacuum Science & Technology B 37 (6).
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